Parametric results for: SI5933DC-T1-E3 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

2 hits Apply

Drain Current-Max (ID) (1)

2.7 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

110 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XDSO-C8 1

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

8 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

UNSPECIFIED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

2.1 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply