Parametric results for: SI4920DY under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 10

13 hits Apply

DS Breakdown Voltage-Min (1)

30 V 10

13 hits Apply

Drain Current-Max (ID) (2)

6 A 7 6.9 A 5

Min (A) - Max (A)

13 hits Apply

Drain-source On Resistance-Max (2)

25 mΩ 3 28 mΩ 7

Min (Ω) - Max (Ω)

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

13 hits Apply

R-PDSO-G8 10

13 hits Apply

e0 3 e3 3

13 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 6 Rochester Electronics LLC 1 Vishay Dale 1 Vishay Intertechnologies 2 Vishay Siliconix 3

13 hits Apply

1 3

13 hits Apply

Number of Elements (1)

2 10

13 hits Apply

Number of Terminals (1)

8 10

13 hits Apply

ENHANCEMENT MODE 12

13 hits Apply

150.0 °C 5

13 hits Apply

PLASTIC/EPOXY 10

13 hits Apply

RECTANGULAR 10

13 hits Apply

SMALL OUTLINE 10

13 hits Apply

Active 2 Obsolete 10 Transferred 1

13 hits Apply

Yes 2

13 hits Apply

260 1

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

13 hits Apply

900 mW 1 2 W 4

Min (W) - Max (W)

13 hits Apply

Surface Mount (1)

YES 12

13 hits Apply