Parametric results for: SI3443DV-T1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

4 hits Apply

Drain Current-Max (ID) (2)

3.4 A 2 4.4 A 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

65 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PDSO-G 1 R-PDSO-G6 2

4 hits Apply

e0 1 e3 1

4 hits Apply

Manufacturer (3)

Temic Semiconductors 1 Vishay Dale 1 Vishay Siliconix 2

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

6 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply