Parametric results for: SDF50N40JAMD under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 18 HIGH RELIABILITY 9

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Configuration (1)

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 27

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DS Breakdown Voltage-Min (1)

400 V 27

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Drain Current-Max (ID) (1)

50 A 27

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Drain-source On Resistance-Max (1)

120 mΩ 27

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METAL-OXIDE SEMICONDUCTOR 27

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R-MSFM-P5 9 R-MSFM-T5 18

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Manufacturer (1)

Solitron Devices Inc 27

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Number of Elements (1)

2 27

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Number of Terminals (1)

5 27

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ENHANCEMENT MODE 27

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150.0 °C 27

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METAL 27

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RECTANGULAR 27

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FLANGE MOUNT 27

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Active 18 Obsolete 9

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No 27

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NOT SPECIFIED 27

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Polarity/Channel Type (1)

N-CHANNEL 27

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500 W 27

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500 W 9

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Surface Mount (1)

NO 27

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