Parametric results for: SDF12N90GAFD under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 48 HIGH RELIABILITY 24

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ISOLATED 72

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 72

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DS Breakdown Voltage-Min (1)

900 V 72

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Drain Current-Max (ID) (1)

12 A 72

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Drain-source On Resistance-Max (1)

900 mΩ 72

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METAL-OXIDE SEMICONDUCTOR 72

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R-MSFM-P3 24 R-MSFM-T3 48

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Manufacturer (1)

Solitron Devices Inc 72

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Number of Elements (1)

1 72

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Number of Terminals (1)

3 72

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ENHANCEMENT MODE 72

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150.0 °C 72

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METAL 72

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RECTANGULAR 72

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FLANGE MOUNT 72

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Active 72

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No 72

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NOT SPECIFIED 72

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Polarity/Channel Type (1)

N-CHANNEL 72

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300 W 72

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300 W 24

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Surface Mount (1)

NO 72

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