Parametric results for: SD1229-08 under RF Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount Transition Frequency-Nom (fT)

HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS 1

1 hit Apply

Collector Current-Max (IC) (1)

4 A 1

1 hit Apply

130 pF 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

18 V 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

5.0 1

1 hit Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

1 hit Apply

O-XRPM-F4 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Microsemi Corporation 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

200.0 °C 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

ROUND 1

1 hit Apply

POST/STUD MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

No 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

200 MHz 1

1 hit Apply