Parametric results for: SCT10 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

47 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

1.2 kV 1

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Drain Current-Max (ID) (1)

12 A 1

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Drain-source On Resistance-Max (1)

690 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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9 pF 1

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R-PSFM-T3 1

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Manufacturer (2)

Cornell Dubilier Electronics Inc 42 STMicroelectronics 5

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Number of Elements (1)

1 1

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Number of Terminals (2)

2 42 3 1

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ENHANCEMENT MODE 1

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200.0 °C 1

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-55.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1 RECTANGULAR PACKAGE 42

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FLANGE MOUNT 1

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Active 46 Not Recommended 1

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No 21 Yes 21

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NOT SPECIFIED 4

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Polarity/Channel Type (1)

N-CHANNEL 1

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150 W 1

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Surface Mount (1)

NO 43

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