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M364C0804CT0-C60
Samsung Semiconductor
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Check for Price | Obsolete | 536.8709 Mbit | 64 | 8MX64 | 5 V | 60 ns | 4096 | FAST PAGE | FAST PAGE DRAM MODULE | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 30 mA | 540 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDMA-N168 | Not Qualified | 70 °C | 168 | UNSPECIFIED | DIMM | DIMM168 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 1.27 mm | DUAL | SAMSUNG SEMICONDUCTOR INC | DIMM | DIMM, DIMM168 | 168 | compliant | EAR99 | 8542.32.00.28 | |||||||||||||||||
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M466F0803BT2-L50
Samsung Semiconductor
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Check for Price | Obsolete | 536.8709 Mbit | 64 | 8MX64 | 3.3 V | 50 ns | 4096 | FAST PAGE WITH EDO | EDO DRAM MODULE | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | YES | 2.4 mA | 960 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-XZMA-N144 | Not Qualified | 70 °C | 144 | UNSPECIFIED | DIMM | DIMM144,32 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 800 µm | ZIG-ZAG | SAMSUNG SEMICONDUCTOR INC | SODIMM | DIMM, DIMM144,32 | 144 | compliant | EAR99 | 8542.32.00.28 | ||||||||||||||||
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K4S560832A-TC75
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 3.3 V | 5.4 ns | 133 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 210 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e0 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP54,.46,32 | 54 | unknown | EAR99 | 8542.32.00.24 | ||||||
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K4S64163LF-AP1L
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 7 ns | 105 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 500 µA | 100 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B52 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 52 | PLASTIC/EPOXY | VFBGA | BGA52,6X13,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 11 mm | 6.6 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, BGA52,6X13,30 | 52 | compliant | EAR99 | 8542.32.00.02 | ||||||
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K4B4G0846A-HCH90
Samsung Semiconductor
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Check for Price | Obsolete | 4.295 Gbit | 8 | 512MX8 | 1.5 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | YES | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | 85 °C | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 10 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | |||||||||||||||||||||||
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K4M563233E-ML800
Samsung Semiconductor
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Check for Price | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 3 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | 70 °C | -25 °C | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LFBGA, | 90 | unknown | EAR99 | 8542.32.00.24 | ||||||||||||||||||
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KM44C4003BK-L5
Samsung Semiconductor
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Check for Price | No | Obsolete | 16.7772 Mbit | 4 | 4MX4 | 5 V | 50 ns | 4096 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | COMMON | 1 | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3-STATE | YES | 300 µA | 90 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.44 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | 3.76 mm | 18.42 mm | 7.62 mm | SAMSUNG SEMICONDUCTOR INC | SOJ | SOJ, SOJ28,.44 | 28 | unknown | EAR99 | 8542.32.00.02 | ||||||||||
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K4S510832B-KL1L
Samsung Semiconductor
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Check for Price | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 3.3 V | 6 ns | 100 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 225 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP54,.46,32 | 54 | compliant | EAR99 | 8542.32.00.28 | ||||||||||
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K4S64163LH-RL1H0
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 2.5 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | OTHER | S-PBGA-B54 | Not Qualified | 70 °C | -25 °C | 240 | 30 | 54 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | VFBGA, | 54 | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||
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KMM364C124AJ-6
Samsung Semiconductor
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Check for Price | Obsolete | 67.1089 Mbit | 64 | 1MX64 | 5 V | 60 ns | 1024 | FAST PAGE | FAST PAGE DRAM MODULE | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | 30 mA | 640 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDMA-N168 | Not Qualified | 70 °C | 168 | UNSPECIFIED | DIMM | DIMM168 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 1.27 mm | DUAL | 25.4 mm | SAMSUNG SEMICONDUCTOR INC | DIMM, DIMM168 | unknown | EAR99 | 8542.32.00.02 |