Parametric results for: S913T under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Functions Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

LOW NOISE 1

8 hits Apply

SOURCE 7

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 7

8 hits Apply

DS Breakdown Voltage-Min (1)

12 V 7

8 hits Apply

Drain Current-Max (ID) (1)

30 mA 7

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 7

8 hits Apply

R-PDSO-G4 7

8 hits Apply

Manufacturer (2)

Temic Semiconductors 7 Vishay Intertechnologies 1

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

1.0 1

8 hits Apply

Number of Terminals (1)

4 8

8 hits Apply

DUAL GATE, DEPLETION MODE 7

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 7

8 hits Apply

SMALL OUTLINE 7

8 hits Apply

Active 1 Transferred 7

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

8 hits Apply

Power Gain-Min (Gp) (1)

16.5 dB 7

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply