Parametric results for: S595T-GS18 under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

8 V 1

1 hit Apply

Drain Current-Max (ID) (1)

20 mA 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

1 hit Apply

R-PDSO-G4 1

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Manufacturer (1)

Temic Semiconductors 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

1 hit Apply

DUAL GATE, DEPLETION MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Transferred 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Power Gain-Min (Gp) (1)

17.0 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply