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Parametric » Optoelectronics » Photo Diodes

Parametric results for: S431521A@ under Photo Diodes

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Manufacturer Part Number: s4315

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Select Parts		Part Number

		S4315-01 Hamamatsu Photonics
		S4315-04 Hamamatsu Photonics
		S4315-02 Hamamatsu Photonics
		S4315 ROHM Semiconductor
		S4315 Hamamatsu Photonics

			Most Relevant			Technical				Compliance	Operating Conditions		Physical							Dimensions	Other
Composite Price	Rohs Code	Part Life Cycle Code	Number of Functions	Surface Mount	Peak Wavelength	Additional Feature	Configuration	Infrared Range	Optoelectronic Device Type	JESD-30 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Elements	Package Body Material	Package Shape	Package Style	Shape	Terminal Form	Terminal Position	Size	Ihs Manufacturer	Package Description	Reach Compliance Code	HTS Code	ECCN Code	Date Of Intro	DS Breakdown Voltage-Min	Drain Current-Max (ID)	Drain-source On Resistance-Max	FET Technology	Feedback Cap-Max (Crss)	Operating Mode	Polarity/Channel Type	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

500 µm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

3 mm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

1 mm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

Check for Price

Active

YES

SINGLE WITH BUILT-IN DIODE

X-XXUC-N

175 °C

1

UNSPECIFIED

UNSPECIFIED

UNCASED CHIP

NO LEAD

UNSPECIFIED

ROHM CO LTD

UNCASED CHIP, X-XXUC-N

compliant

EAR99

2018-08-10

1.2 kV

17 A

200 mΩ

METAL-OXIDE SEMICONDUCTOR

15 pF

ENHANCEMENT MODE

N-CHANNEL

42 A

SWITCHING

SILICON CARBIDE

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

200 µm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

Compare

Hamamatsu Photonics

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

500 µm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

Hamamatsu Photonics

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

3 mm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

Hamamatsu Photonics

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

1 mm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50

ROHM Semiconductor

Check for Price

Active

YES

SINGLE WITH BUILT-IN DIODE

X-XXUC-N

175 °C

1

UNSPECIFIED

UNSPECIFIED

UNCASED CHIP

NO LEAD

UNSPECIFIED

ROHM CO LTD

UNCASED CHIP, X-XXUC-N

compliant

EAR99

2018-08-10

1.2 kV

17 A

200 mΩ

METAL-OXIDE SEMICONDUCTOR

15 pF

ENHANCEMENT MODE

N-CHANNEL

42 A

SWITCHING

SILICON CARBIDE

Hamamatsu Photonics

Check for Price

Yes

Active

1

800 nm

HIGH SENSITIVITY

SINGLE

YES

AVALANCHE PHOTODIODE

85 °C

-20 °C

ROUND

200 µm

HAMAMATSU PHOTONICS KK

TO-8, 6 PIN

unknown

8541.40.60.50