Filter Your Search
1 - 10 of 20 results
|
S29GL01GS10DHI020
Infineon Technologies AG
|
$12.6147 | Yes | Active | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 100 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 1024 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||||
|
S29GL01GS10DHI020
Cypress Semiconductor
|
$12.6947 | Yes | Transferred | 1.0737 Gbit | 8 | 64K | 128MX8 | 3 V | 100 ns | FLASH | BOTTOM/TOP | YES | YES | YES | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 16 words | PARALLEL | 3 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | CYPRESS SEMICONDUCTOR CORP | compliant | 3A991.B.1.A | 8542.32.00.51 | ||||||||||
|
IS29GL01GS-10DHI02
Integrated Silicon Solution Inc
|
Check for Price | Active | 1.0737 Gbit | 8 | 128MX8 | 3 V | 100 ns | FLASH | BOTTOM/TOP | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | S-PBGA-B64 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 64 | PLASTIC/EPOXY | LBGA | SQUARE | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | INTEGRATED SILICON SOLUTION INC | unknown | EAR99 | 8542.32.00.51 | LBGA, | |||||||||||||||||||||||||
|
S29GL01GS10DHI010
Cypress Semiconductor
|
Check for Price | Yes | Transferred | 1.0737 Gbit | 8 | 64K | 128MX8 | 3 V | 100 ns | FLASH | BOTTOM/TOP | YES | YES | YES | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 16 words | PARALLEL | 3 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | CYPRESS SEMICONDUCTOR CORP | compliant | 3A991.B.1.A | 8542.32.00.51 | ||||||||||
|
IS29GL01GS-10DHI02-TR
Integrated Silicon Solution Inc
|
Check for Price | Active | 1.0737 Gbit | 8 | 128MX8 | 3 V | 100 ns | FLASH | BOTTOM/TOP | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | S-PBGA-B64 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 64 | PLASTIC/EPOXY | LBGA | SQUARE | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | INTEGRATED SILICON SOLUTION INC | unknown | EAR99 | 8542.32.00.51 | LBGA, | |||||||||||||||||||||||||
|
S29GL01GS10DHI013
Spansion
|
Check for Price | Yes | Transferred | 1.0737 Gbit | 8 | 64K | 128MX8 | 3 V | 100 ns | FLASH | YES | YES | YES | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 16 words | PARALLEL | 2.7 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | SPANSION INC | compliant | 3A991.B.1.A | 8542.32.00.51 | LEAD FREE, PACKAGE | BGA | 64 | |||||||||||||
|
IS29GL01GS-10DHI01
Integrated Silicon Solution Inc
|
Check for Price | Active | 1.0737 Gbit | 8 | 128MX8 | 3 V | 100 ns | FLASH | BOTTOM/TOP | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | S-PBGA-B64 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 64 | PLASTIC/EPOXY | LBGA | SQUARE | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | INTEGRATED SILICON SOLUTION INC | unknown | EAR99 | 8542.32.00.51 | LBGA, | |||||||||||||||||||||||||
|
S29GL01GS10DHI023
Infineon Technologies AG
|
Check for Price | Yes | Active | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 100 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 1024 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | INFINEON TECHNOLOGIES AG | compliant | ||||||||||||
|
S29GL01GS10DHI010
Spansion
|
Check for Price | Yes | Yes | Transferred | 1.0737 Gbit | 8 | 64K | 128MX8 | 3 V | 100 ns | FLASH | YES | YES | YES | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 16 words | PARALLEL | 2.7 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | SPANSION INC | compliant | Spansion | 3A991.B.1.A | 8542.32.00.51 | LEAD FREE, PACKAGE | BGA | 64 | ||||||||
|
S29GL01GS10DHI020
Spansion
|
Check for Price | Yes | Transferred | 1.0737 Gbit | 8 | 64K | 128MX8 | 3 V | 100 ns | FLASH | YES | YES | YES | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 16 words | PARALLEL | 2.7 V | YES | 100 µA | 80 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | S-PBGA-B64 | Not Qualified | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | SPANSION INC | compliant | Spansion | 3A991.B.1.A | 8542.32.00.51 | LEAD FREE, PACKAGE | BGA | 64 |