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S29AL004D55BAI023
AMD
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Check for Price | No | Transferred | 4.1943 Mbit | 16 | 16K,8K,32K,64K | 256KX16 | 55 ns | FLASH | 8 | BOTTOM | YES | YES | 1000000 Write/Erase Cycles | 1,2,1,7 | 256000 | 262.144 k | PARALLEL | YES | 5 µA | 35 µA | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e0 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | ADVANCED MICRO DEVICES INC | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||
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S29AL004D55BAI023
Spansion
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 16K,8K,32K,64K | 256KX16 | 3 V | 55 ns | FLASH | ALSO CONFIGURABLE AS 512K X 8; BOTTOM BOOT BLOCK | 8 | BOTTOM | YES | YES | 1000000 Write/Erase Cycles | 1 | 1,2,1,7 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | SPANSION INC | not_compliant | EAR99 | 8542.32.00.51 | BGA | 8.15 X 6.15 MM, FBGA-48 | 48 | ||
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S29AL004D55BAI023
Cypress Semiconductor
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Check for Price | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 3 V | 55 ns | FLASH | ALSO CONFIGURABLE AS 512K X 8; BOTTOM BOOT BLOCK | 8 | BOTTOM | 1 | 256000 | 262.144 k | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B48 | e0 | 3 | 85 °C | -40 °C | 260 | 48 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1 mm | 8.15 mm | 6.15 mm | CYPRESS SEMICONDUCTOR CORP | compliant | EAR99 | 8542.32.00.51 | FBGA-48 |