Parametric results for: S26KS512SDABHI030 under Flash Memories

All Filters Access Time-Max Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

96 ns 1

2 hits Apply

Clock Frequency-Max (fCLK) (1)

100 MHz 1

2 hits Apply

20 1

2 hits Apply

100000.0 Write/Erase Cycles 1

2 hits Apply

R-PBGA-B24 2

2 hits Apply

8 mm 2

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

2 hits Apply

Memory Density (1)

536.8709 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (2)

8 1 16 1

Min - Max

2 hits Apply

3 1

2 hits Apply

1.0 2

2 hits Apply

24 2

2 hits Apply

67.1089 M 2

2 hits Apply

3.2E7 1 6.4E7 1

Min - Max

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (2)

32MX16 1 64MX8 1

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

VBGA 2

2 hits Apply

BGA24,5X5,40 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY, VERY THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 2

2 hits Apply