Parametric results for: S25HS512TFANHB010 under Flash Memories

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

166 MHz 1

2 hits Apply

25 1

2 hits Apply

1280000.0 Write/Erase Cycles 1

2 hits Apply

R-PDSO-N8 1

2 hits Apply

e3 2

2 hits Apply

8 mm 1

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

2 hits Apply

Memory Density (1)

536.8709 Mbit 1

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 1

2 hits Apply

3 1

2 hits Apply

1.0 1

2 hits Apply

8 1

2 hits Apply

67.1089 M 1

2 hits Apply

6.4E7 1

2 hits Apply

SYNCHRONOUS 1

2 hits Apply

105.0 °C 1

2 hits Apply

-40.0 °C 1

2 hits Apply

Organization (1)

64MX8 1

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

HVSON 1

2 hits Apply

SOLCC8,.3 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

2 hits Apply