Parametric results for: S25FL064LABMFI013 under Flash Memories

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

IT ALSO HAVE X1 MEMORY WIDTH 1

2 hits Apply

2 1

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Clock Frequency-Max (fCLK) (1)

108 MHz 2

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2 1

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100000.0 Write/Erase Cycles 1

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R-PDSO-G8 1 S-PDSO-G8 1

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e3 2

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5.28 mm 2

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Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

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Memory Density (1)

67.1089 Mbit 2

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FLASH 2

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Memory Width (1)

8 2

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3 2

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1.0 2

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8 2

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8.3886 M 2

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8000000.0 2

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SYNCHRONOUS 2

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85.0 °C 2

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-40.0 °C 2

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Organization (1)

8MX8 2

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3-STATE 2

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PLASTIC/EPOXY 2

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SOP 2

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SOP8,.3 1

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SQUARE 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply