Parametric results for: RUE002N under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (2)

20 V 2 50 V 1

Min (V) - Max (V)

3 hits Apply

Drain Current-Max (ID) (1)

200 mA 3

3 hits Apply

Drain-source On Resistance-Max (2)

1.4 Ω 2 2.4 Ω 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G3 3

3 hits Apply

e1 2 e2 1

3 hits Apply

Manufacturer (1)

ROHM Semiconductor 3

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Not Recommended 2 Obsolete 1

3 hits Apply

Yes 3

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

150 mW 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply