Parametric results for: RN2510, under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR 3

7 hits Apply

Collector Current-Max (IC) (1)

100 mA 7

7 hits Apply

6 pF 3

7 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 6

7 hits Apply

Configuration (1)

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR 6

7 hits Apply

DC Current Gain-Min (hFE) (1)

120.0 7

7 hits Apply

R-PDSO-G5 6

7 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 7

7 hits Apply

Number of Elements (1)

2 7

7 hits Apply

Number of Terminals (1)

5 6

7 hits Apply

150.0 °C 3

7 hits Apply

PLASTIC/EPOXY 6

7 hits Apply

RECTANGULAR 6

7 hits Apply

SMALL OUTLINE 6

7 hits Apply

Active 2 Obsolete 5

7 hits Apply

No 1

7 hits Apply

NOT SPECIFIED 2

7 hits Apply

Polarity/Channel Type (1)

PNP 7

7 hits Apply

300 mW 2

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 6

7 hits Apply