Parametric results for: RN2308, under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR RATIO IS 0.468 3

7 hits Apply

Collector Current-Max (IC) (1)

100 mA 5

7 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 3

7 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 3

7 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 5

7 hits Apply

R-PDSO-G3 4

7 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 7

7 hits Apply

Number of Elements (1)

1 5

7 hits Apply

Number of Terminals (1)

3 4

7 hits Apply

150.0 °C 1

7 hits Apply

PLASTIC/EPOXY 4

7 hits Apply

RECTANGULAR 4

7 hits Apply

SMALL OUTLINE 4

7 hits Apply

Active 4 Obsolete 3

7 hits Apply

260 1 NOT SPECIFIED 3

7 hits Apply

Polarity/Channel Type (1)

PNP 5

7 hits Apply

100 mW 2

7 hits Apply

Surface Mount (1)

YES 5

7 hits Apply

Transition Frequency-Nom (fT) (1)

200 MHz 3

7 hits Apply