Parametric results for: RN1962FE under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 1 1

5 hits Apply

Collector Current-Max (IC) (1)

100 mA 4

5 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 1

5 hits Apply

DC Current Gain-Min (hFE) (1)

50.0 4

5 hits Apply

R-PDSO-F6 1

5 hits Apply

e0 1

5 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 5

5 hits Apply

Number of Elements (1)

2 4

5 hits Apply

Number of Terminals (1)

6 1

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 1

5 hits Apply

RECTANGULAR 1

5 hits Apply

SMALL OUTLINE 1

5 hits Apply

End Of Life 1 Obsolete 4

5 hits Apply

Polarity/Channel Type (1)

NPN 4

5 hits Apply

100 mW 4

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

5 hits Apply