Parametric results for: RN1706 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 10 1 BUILT IN BIAS RESISTOR RATIO IS 10 1 BUILT-IN BIAS RESISTOR RATIO IS 0.1 4 BUILT-IN RESISTOR RATIO IS 10 1

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Collector Current-Max (IC) (1)

100 mA 11

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6 pF 3

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Collector-Emitter Voltage-Max (1)

50 V 7

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Configuration (1)

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR 7

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DC Current Gain-Min (hFE) (1)

80.0 11

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R-PDSO-F5 1 R-PDSO-G5 6

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Manufacturer (1)

Toshiba America Electronic Components 14

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Number of Elements (1)

2 11

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Number of Terminals (1)

5 7

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150.0 °C 4

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PLASTIC/EPOXY 7

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RECTANGULAR 7

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SMALL OUTLINE 7

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Active 8 Obsolete 6

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No 1

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NOT SPECIFIED 8

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Polarity/Channel Type (1)

NPN 11

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100 mW 4 200 mW 2

Min (W) - Max (W)

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Surface Mount (1)

YES 11

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Transition Frequency-Nom (fT) (1)

250 MHz 7

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