Parametric results for: RN1306,LF under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 10 1

3 hits Apply

Collector Current-Max (IC) (1)

100 mA 1

3 hits Apply

6 pF 1

3 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

3 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 1

3 hits Apply

R-PDSO-G3 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 1

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Active 3

3 hits Apply

Yes 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

NPN 1

3 hits Apply

100 mW 1

3 hits Apply

100 mW 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

3 hits Apply