Parametric results for: RN1131F under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR 1 BUILT-IN BIAS RESISTOR 1

4 hits Apply

Collector Current-Max (IC) (1)

100 mA 3

4 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 3

4 hits Apply

DC Current Gain-Min (hFE) (1)

120.0 3

4 hits Apply

R-PDSO-F3 3

4 hits Apply

e0 2

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 3 Obsolete 1

4 hits Apply

Polarity/Channel Type (1)

NPN 3

4 hits Apply

100 mW 1 150 mW 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 3

4 hits Apply