Parametric results for: RN1118MFV under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 0.21 2 BUILT-IN BIAS RESISTOR RATIO IS 0.21 1

6 hits Apply

Collector Current-Max (IC) (1)

100 mA 4

6 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 3

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 3

6 hits Apply

DC Current Gain-Min (hFE) (1)

50.0 4

6 hits Apply

R-PDSO-F3 3

6 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 6

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

3 3

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

SMALL OUTLINE 3

6 hits Apply

Active 4 Obsolete 2

6 hits Apply

NOT SPECIFIED 5

6 hits Apply

Polarity/Channel Type (1)

NPN 4

6 hits Apply

150 mW 1

6 hits Apply

Surface Mount (1)

YES 4

6 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 3

6 hits Apply