Parametric results for: RN1112F under Other Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR 4

7 hits Apply

Collector Current-Max (IC) (2)

50 mA 2 100 mA 4

Min (A) - Max (A)

7 hits Apply

Collector-Emitter Voltage-Max (2)

20 V 1 50 V 3

Min (V) - Max (V)

7 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 4

7 hits Apply

DC Current Gain-Min (hFE) (2)

120.0 4 300.0 2

Min - Max

7 hits Apply

R-PDSO-F3 4

7 hits Apply

e0 1

7 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 7

7 hits Apply

Number of Elements (1)

1 6

7 hits Apply

Number of Terminals (1)

3 4

7 hits Apply

150.0 °C 3

7 hits Apply

PLASTIC/EPOXY 4

7 hits Apply

RECTANGULAR 4

7 hits Apply

SMALL OUTLINE 4

7 hits Apply

Active 2 Obsolete 5

7 hits Apply

NOT SPECIFIED 2

7 hits Apply

Polarity/Channel Type (1)

NPN 6

7 hits Apply

50 mW 2 100 mW 2 150 mW 1

Min (W) - Max (W)

7 hits Apply

Surface Mount (1)

YES 6

7 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 3

7 hits Apply