Parametric results for: RN1110FT under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR 1

4 hits Apply

Collector Current-Max (IC) (1)

100 mA 4

4 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

4 hits Apply

DC Current Gain-Min (hFE) (1)

120.0 4

4 hits Apply

R-PDSO-F3 1

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 2 Obsolete 2

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

100 mW 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

250 MHz 1

4 hits Apply