Parametric results for: RFP2N18 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

9 hits Apply

DRAIN 3

9 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 3

9 hits Apply

DS Breakdown Voltage-Min (1)

180 V 3

9 hits Apply

Drain Current-Max (ID) (1)

2 A 7

9 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 3

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

9 hits Apply

25 pF 1 35 pF 1

Min (pF) - Max (pF)

9 hits Apply

TO-220AB 3

9 hits Apply

R-PSFM-T3 3

9 hits Apply

e0 7

9 hits Apply

Manufacturer (5)

General Electric Solid State 2 Harris Semiconductor 2 Intersil Corporation 2 Rochester Electronics LLC 1 Thomson Consumer Electronics 2

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Number of Elements (1)

1 7

9 hits Apply

Number of Terminals (1)

3 3

9 hits Apply

ENHANCEMENT MODE 7

9 hits Apply

150.0 °C 6

9 hits Apply

PLASTIC/EPOXY 3

9 hits Apply

RECTANGULAR 3

9 hits Apply

FLANGE MOUNT 3

9 hits Apply

Active 1 Obsolete 6 Transferred 2

9 hits Apply

No 1

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

9 hits Apply

25 W 2

9 hits Apply

25 W 6

9 hits Apply

Surface Mount (1)

NO 7

9 hits Apply