Parametric results for: RFL1N15L under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

4 hits Apply

DRAIN 1

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

150 V 1

4 hits Apply

Drain Current-Max (ID) (1)

1 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

1.9 Ω 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

35 pF 1

4 hits Apply

TO-205AF 1

4 hits Apply

O-MBCY-W3 1

4 hits Apply

e0 2

4 hits Apply

Manufacturer (4)

General Electric Solid State 1 Intersil Corporation 1 New Jersey Semiconductor Products Inc 1 Thomson Consumer Electronics 1

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 2

4 hits Apply

METAL 1

4 hits Apply

ROUND 1

4 hits Apply

CYLINDRICAL 1

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

8.33 W 1

4 hits Apply

8.3 W 2

4 hits Apply

Surface Mount (1)

NO 2

4 hits Apply