Findchips: Parametric Search Results for RFL1N10

Parametric results for: RFL1N10 under Small Signal Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		RFL1N10 Harris Semiconductor
		RFL1N10L Harris Semiconductor
		RFL1N10L New Jersey Semiconductor Products Inc
		RFL1N10L General Electric Solid State
		RFL1N12 New Jersey Semiconductor Products Inc
		RFL1N10 General Electric Solid State
		RFL1N20 New Jersey Semiconductor Products Inc
		RFL1N10 New Jersey Semiconductor Products Inc
		RFL1N10L Fairchild Semiconductor Corporation
		RFL1N10 Intersil Corporation

			Most Relevant								Technical											Compliance				Operating Conditions		Physical							Other
Composite Price	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Feedback Cap-Max (Crss)	FET Technology	Operating Mode	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	Turn-off Time-Max (toff)	Turn-on Time-Max (ton)	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Operating Temperature-Max	Operating Temperature-Min	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Date Of Intro

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

8.3 W

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

HARRIS SEMICONDUCTOR

CYLINDRICAL, O-MBCY-W3

unknown

EAR99

8541.29.00.95

Check for Price

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

LOGIC LEVEL COMPATIBLE

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

8.3 W

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

Tin/Lead (Sn/Pb)

WIRE

BOTTOM

HARRIS SEMICONDUCTOR

CYLINDRICAL, O-MBCY-W3

unknown

EAR99

8541.29.00.95

Check for Price

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

95 ns

70 ns

TO-205AF

O-MBCY-W3

150 °C

-55 °C

DRAIN

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

unknown

EAR99

Check for Price

Transferred

GENERAL ELECTRIC SOLID STATE

unknown

EAR99

Check for Price

Active

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

unknown

EAR99

2018-10-21

Check for Price

Transferred

GENERAL ELECTRIC SOLID STATE

unknown

EAR99

Check for Price

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

200 V

1 A

3.65 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

90 ns

55 ns

TO-205AF

O-MBCY-W3

150 °C

-55 °C

DRAIN

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

unknown

EAR99

Check for Price

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

95 ns

70 ns

TO-205AF

O-MBCY-W3

150 °C

-55 °C

DRAIN

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

unknown

EAR99

2018-11-28

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

FAIRCHILD SEMICONDUCTOR CORP

unknown

EAR99

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

8.3 W

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

INTERSIL CORP

CYLINDRICAL, O-MBCY-W3

not_compliant

EAR99

8541.29.00.95

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Compare

RFL1N10

Harris Semiconductor

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

8.3 W

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

HARRIS SEMICONDUCTOR

CYLINDRICAL, O-MBCY-W3

unknown

EAR99

8541.29.00.95

RFL1N10L

Harris Semiconductor

Check for Price

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

LOGIC LEVEL COMPATIBLE

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

8.3 W

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

Tin/Lead (Sn/Pb)

WIRE

BOTTOM

HARRIS SEMICONDUCTOR

CYLINDRICAL, O-MBCY-W3

unknown

EAR99

8541.29.00.95

RFL1N10L

New Jersey Semiconductor Products Inc

Check for Price

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

95 ns

70 ns

TO-205AF

O-MBCY-W3

150 °C

-55 °C

DRAIN

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

unknown

EAR99

RFL1N10L

General Electric Solid State

Check for Price

Transferred

GENERAL ELECTRIC SOLID STATE

unknown

EAR99

RFL1N12

New Jersey Semiconductor Products Inc

Check for Price

Active

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

unknown

EAR99

2018-10-21

RFL1N10

General Electric Solid State

Check for Price

Transferred

GENERAL ELECTRIC SOLID STATE

unknown

EAR99

RFL1N20

New Jersey Semiconductor Products Inc

Check for Price

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

200 V

1 A

3.65 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

90 ns

55 ns

TO-205AF

O-MBCY-W3

150 °C

-55 °C

DRAIN

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

unknown

EAR99

RFL1N10

New Jersey Semiconductor Products Inc

Check for Price

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

95 ns

70 ns

TO-205AF

O-MBCY-W3

150 °C

-55 °C

DRAIN

METAL

ROUND

CYLINDRICAL

WIRE

BOTTOM

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

unknown

EAR99

2018-11-28

RFL1N10L

Fairchild Semiconductor Corporation

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

5 A

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

FAIRCHILD SEMICONDUCTOR CORP

unknown

EAR99

RFL1N10

Intersil Corporation

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1.2 Ω

25 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

8.33 W

8.3 W

SWITCHING

SILICON

TO-205AF

O-MBCY-W3

Not Qualified

150 °C

DRAIN

METAL

ROUND

CYLINDRICAL

TIN LEAD

WIRE

BOTTOM

INTERSIL CORP

CYLINDRICAL, O-MBCY-W3

not_compliant

EAR99

8541.29.00.95

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