Parametric results for: RFH12N35 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

350 V 1

4 hits Apply

Drain Current-Max (ID) (1)

12 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

380 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

400 pF 1

4 hits Apply

TO-218AC 1

4 hits Apply

R-PSFM-T3 1

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

General Electric Solid State 1 Harris Semiconductor 1 Intersil Corporation 1 Thomson Consumer Electronics 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

FLANGE MOUNT 1

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

150 W 1

4 hits Apply

150 W 3

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply