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RC28F800C3TA90
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 90 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 25 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | NUMONYX | BGA | LEAD FREE, BGA-64 | 64 | unknown | EAR99 | 8542.32.00.51 | ||||||
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RC28F800C3TA110
Micron Technology Inc
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 110 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 25 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | S-PBGA-B64 | Not Qualified | e0 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | BGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | MICRON TECHNOLOGY INC | BGA, BGA64,8X8,40 | unknown | EAR99 | 8542.32.00.51 | ||||||
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RC28F800C3TA110
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 110 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 25 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | NUMONYX | BGA | LEAD FREE, BGA-64 | 64 | unknown | EAR99 | 8542.32.00.51 | ||||
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RC28F800C3TA90
Intel Corporation
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 90 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 5 µA | 55 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | e0 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | INTEL CORP | BGA | BGA-64 | 64 | unknown | EAR99 | 8542.32.00.51 | ||||
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RC28F800C3TD70
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 70 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 20 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | NUMONYX | BGA | LEAD FREE, BGA-64 | 64 | unknown | EAR99 | 8542.32.00.51 | ||||
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RC28F800C3TA90
Micron Technology Inc
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 90 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 25 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | S-PBGA-B64 | Not Qualified | e0 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | BGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | MICRON TECHNOLOGY INC | BGA, BGA64,8X8,40 | unknown | EAR99 | 8542.32.00.51 | ||||||
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RC28F800C3TA110
Intel Corporation
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Check for Price | No | Transferred | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 110 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 5 µA | 55 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | e0 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | INTEL CORP | BGA | BGA-64 | 64 | compliant | EAR99 | 8542.32.00.51 | ||||
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RC28F800C3TD70
Intel Corporation
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Check for Price | No | Transferred | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 70 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP | TOP | YES | YES | NO | 1 | 8,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 5 µA | 55 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | e0 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | INTEL CORP | BGA | BGA-64 | 64 | compliant | EAR99 | 8542.32.00.51 | ||||
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RC28F800C3TD70
Micron Technology Inc
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 70 ns | FLASH | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK | TOP | YES | YES | NO | 1 | 8,31 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | 20 µA | 18 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | S-PBGA-B64 | Not Qualified | e0 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | BGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | MICRON TECHNOLOGY INC | BGA, BGA64,8X8,40 | unknown | EAR99 | 8542.32.00.51 |