Parametric results for: RAD7260 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

HIGH RELIABILITY 3

9 hits Apply

Configuration (1)

SINGLE 3

9 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

9 hits Apply

Drain Current-Max (ID) (1)

50 A 3

9 hits Apply

Drain-source On Resistance-Max (1)

34 mΩ 3

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

9 hits Apply

R-XUUC-N2 3

9 hits Apply

Manufacturer (3)

Cobham PLC 3 Cobham RAD Solutions 3 Cobham Semiconductor Solutions 3

9 hits Apply

Number of Elements (1)

1 3

9 hits Apply

Number of Terminals (1)

2 3

9 hits Apply

ENHANCEMENT MODE 3

9 hits Apply

125.0 °C 3

9 hits Apply

-55.0 °C 3

9 hits Apply

UNSPECIFIED 3

9 hits Apply

RECTANGULAR 3

9 hits Apply

UNCASED CHIP 3

9 hits Apply

Active 3 Transferred 6

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

9 hits Apply

Surface Mount (1)

YES 3

9 hits Apply