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Parametric » Transistors » RF Power Field-Effect Transistors

Parametric results for: RA13H1317M under RF Power Field-Effect Transistors

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Manufacturer Part Number: ra13h1317m

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Select Parts		Part Number

		RA13H1317M1-501 Mitsubishi Electric
		RA13H1317M-E01 Mitsubishi Electric
		RA13H1317M-01 Mitsubishi Electric

			Operating Conditions		Other
Composite Price	Rohs Code	Part Life Cycle Code	Operating Temperature-Max	Operating Temperature-Min	Ihs Manufacturer	Reach Compliance Code	ECCN Code	Characteristic Impedance	Construction	Input Power-Max (CW)	Operating Frequency-Max	Operating Frequency-Min	RF/Microwave Device Type	VSWR-Max

Check for Price

Yes

Active

MITSUBISHI ELECTRIC CORP

unknown

EAR99

Check for Price

Obsolete

110 °C

-30 °C

MITSUBISHI ELECTRIC CORP

unknown

50 Ω

COMPONENT

20 dBm

175 MHz

135 MHz

NARROW BAND HIGH POWER

3

Check for Price

Obsolete

110 °C

-30 °C

MITSUBISHI ELECTRIC CORP

unknown

50 Ω

COMPONENT

20 dBm

175 MHz

135 MHz

NARROW BAND HIGH POWER

3

Compare

RA13H1317M1-501

Mitsubishi Electric

Check for Price

Yes

Active

MITSUBISHI ELECTRIC CORP

unknown

EAR99

Mitsubishi Electric

Check for Price

Obsolete

110 °C

-30 °C

MITSUBISHI ELECTRIC CORP

unknown

50 Ω

COMPONENT

20 dBm

175 MHz

135 MHz

NARROW BAND HIGH POWER

3

Mitsubishi Electric

Check for Price

Obsolete

110 °C

-30 °C

MITSUBISHI ELECTRIC CORP

unknown

50 Ω

COMPONENT

20 dBm

175 MHz

135 MHz

NARROW BAND HIGH POWER

3