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CY7C1312KV18-250BZI
Infineon Technologies AG
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$16.3691 | No | Active | 18.8744 Mbit | 18 | 1MX18 | 1.8 V | 450 ps | 250 MHz | QDR II SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 250 mA | 1.7 V | 560 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 20 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | INFINEON TECHNOLOGIES AG | compliant | |||||||||||
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CY7C1514KV18-250BZI
Infineon Technologies AG
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$118.4545 | No | Active | 75.4975 Mbit | 36 | 2MX36 | 1.8 V | 450 ps | 250 MHz | QDR II SRAM | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | SEPARATE | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.7 V | 790 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 20 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | |||||||||||
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GS81302Q37GE-318
GSI Technology
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$145.4665 | Yes | Not Recommended | 150.9949 Mbit | 36 | 4MX36 | 1.8 V | 450 ps | QDR II PLUS SRAM | PIPELINED ARCHITECTURE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | e1 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 15 mm | GSI TECHNOLOGY | compliant | GSI TECHNOLOGY | BGA | LBGA, | 165 | 3A991.B.2.B | 8542.32.00.41 | ||||||||||||||
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GS81302DT38GE-500I
GSI Technology
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$149.4021 | Yes | Yes | Not Recommended | 150.9949 Mbit | 36 | 4MX36 | 1.8 V | 450 ps | QDR II SRAM | PIPELINED ARCHITECTURE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 15 mm | GSI TECHNOLOGY | compliant | GSI TECHNOLOGY | BGA | LBGA, | 165 | 3A991.B.2.B | 8542.32.00.41 | ||||||||||||
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CY7C1612KV18-250BZXC
Infineon Technologies AG
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$278.7502 | Yes | Active | 150.9949 Mbit | 18 | 8MX18 | 1.8 V | 450 ps | 250 MHz | QDR II SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | NO | PARALLEL | 370 mA | 1.7 V | 800 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INFINEON TECHNOLOGIES AG | compliant | FBGA-165 | |||||||||
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CY7C1612KV18-250BZXC
Cypress Semiconductor
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$308.0064 | Yes | Transferred | 150.9949 Mbit | 18 | 8MX18 | 1.8 V | 450 ps | 250 MHz | QDR II SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | NO | PARALLEL | 370 mA | 1.7 V | 800 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | CYPRESS SEMICONDUCTOR CORP | compliant | BGA | FBGA-165 | 165 | 3A991.B.2.A | 8542.32.00.41 | ||||||
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CY7C2644KV18-300BZXI
Infineon Technologies AG
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$320.3315 | Yes | Active | 150.9949 Mbit | 36 | 4MX36 | 1.8 V | QDR II PLUS SRAM | PIPELINED ARCHITECTURE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | e1 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | ||||||||||||||||||
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CY7C2665KV18-550BZI
Infineon Technologies AG
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$657.3463 | No | Active | 150.9949 Mbit | 36 | 4MX36 | 1.8 V | 450 ps | 550 MHz | QDR II PLUS SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | PARALLEL | 500 mA | 1.7 V | 1.52 mA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | INFINEON TECHNOLOGIES AG | compliant | Infineon | FBGA-165 | |||||||
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CY7C2665KV18-550BZI
Cypress Semiconductor
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$726.3601 | No | Transferred | 150.9949 Mbit | 36 | 4MX36 | 1.8 V | 450 ps | 550 MHz | QDR II PLUS SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | PARALLEL | 500 mA | 1.7 V | 1.52 mA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | CYPRESS SEMICONDUCTOR CORP | compliant | BGA | FBGA-165 | 165 | 3A991.B.2.A | 8542.32.00.41 | ||||
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GS81302Q07GE-318IT
GSI Technology
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Check for Price | Active | 134.2177 Mbit | 8 | 16MX8 | 1.8 V | 450 ps | QDR II PLUS SRAM | PIPELINED ARCHITECTURE | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | e1 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 15 mm | GSI TECHNOLOGY | compliant | BGA | LBGA, | 165 | 3A991.B.2.A | 8542.32.00.41 |