Parametric results for: PTVA123501FC-V1-R250 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

105 V 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

L BAND 4

4 hits Apply

R-CDFP-F2 4

4 hits Apply

Manufacturer (3)

Cree, Inc. 1 Infineon Technologies AG 2 Wolfspeed 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

225.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLATPACK 4

4 hits Apply

Active 1 Transferred 3

4 hits Apply

NOT SPECIFIED 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Power Gain-Min (Gp) (1)

16.5 dB 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply