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PSMN1R2-25YLC,115
Nexperia
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$0.7549 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 25 V | 1 | 100 A | 1.7 mΩ | HIGH RELIABILITY, ULTRA LOW RESISTANCE | 178 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.133 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | SMALL OUTLINE, R-PSSO-G4 | 4 | SOT669 | not_compliant | EAR99 | Nexperia | ||||||||||
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PSMN1R2-25YLDX
Nexperia
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$0.9095 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 25 V | 1 | 100 A | 1.69 mΩ | HIGH RELIABILITY | 1293 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.163 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | IEC-60134 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | SMALL OUTLINE, R-PSSO-G4 | 4 | SOT669 | compliant | EAR99 | Nexperia | |||||||||
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PSMN1R2-30YLDX
Nexperia
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$1.0094 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 1.6 mΩ | HIGH RELIABILITY | 961 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.181 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | IEC-60134 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | SOP-8, 4 PIN | 4 | SOT669 | not_compliant | EAR99 | Nexperia | ||||||||
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PSMN1R2-30YLC,115
Nexperia
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$1.0322 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 1.65 mΩ | HIGH RELIABILITY, ULTRA LOW RESISTANCE | 209 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.237 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | SO8, LFPAK-4 | 4 | SOT669 | not_compliant | EAR99 | Nexperia | |||||||||
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PSMN1R2-25YL,115
Nexperia
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$1.4512 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 25 V | 1 | 100 A | 1.85 mΩ | 677 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 815 A | SWITCHING | SILICON | R-PSSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOIC | ROHS COMPLIANT, PLASTIC, LFPAK-4 | 4 | SOT1023 | not_compliant | EAR99 | Nexperia | |||||||||
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PSMN1R2-30YLC
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 1.65 mΩ | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 209 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.237 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | NXP SEMICONDUCTORS | PLASTIC, POWER-SO8, LFPAK-4 | 235 | unknown | EAR99 | NXP | ||||||||||
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PSMN1R2-30YLD
Nexperia
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 100 A | 1.6 mΩ | HIGH RELIABILITY | 961 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.181 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | IEC-60134 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SOP-8, 4 PIN | not_compliant | EAR99 | Nexperia | 2017-02-17 | ||||||||||
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PSMN1R2-25YLC
Nexperia
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 25 V | 1 | 100 A | 1.7 mΩ | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 178 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.133 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SO8, LFPAK-4 | not_compliant | EAR99 | Nexperia | 2017-02-01 | |||||||||||
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PSMN1R2-25YLD
Nexperia
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 25 V | 1 | 230 A | 1.69 mΩ | HIGH RELIABILITY | 1293 mJ | 292 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 172 W | 1.163 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | IEC-60134 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | NEXPERIA | SMALL OUTLINE, R-PSSO-G4 | not_compliant | EAR99 | Nexperia | 2017-02-27 | ||||||
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PSMN1R2-25YLC
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 25 V | 1 | 100 A | 1.7 mΩ | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 178 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.133 kA | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | e3 | Not Qualified | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | NXP SEMICONDUCTORS | PLASTIC, POWER-SO8, LFPAK-4 | 235 | unknown | EAR99 |