Parametric results for: PSMN1R2 under Power Field-Effect Transistors

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Manufacturer Part Number: psmn1r2
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PSMN1R2-25YLC,115
Nexperia
$0.7549 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 25 V 1 100 A 1.7 mΩ HIGH RELIABILITY, ULTRA LOW RESISTANCE 178 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.133 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SOIC SMALL OUTLINE, R-PSSO-G4 4 SOT669 not_compliant EAR99 Nexperia
PSMN1R2-25YLDX
Nexperia
$0.9095 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 25 V 1 100 A 1.69 mΩ HIGH RELIABILITY 1293 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.163 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 IEC-60134 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SOIC SMALL OUTLINE, R-PSSO-G4 4 SOT669 compliant EAR99 Nexperia
PSMN1R2-30YLDX
Nexperia
$1.0094 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 100 A 1.6 mΩ HIGH RELIABILITY 961 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.181 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 IEC-60134 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SOIC SOP-8, 4 PIN 4 SOT669 not_compliant EAR99 Nexperia
PSMN1R2-30YLC,115
Nexperia
$1.0322 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 100 A 1.65 mΩ HIGH RELIABILITY, ULTRA LOW RESISTANCE 209 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.237 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SOIC SO8, LFPAK-4 4 SOT669 not_compliant EAR99 Nexperia
PSMN1R2-25YL,115
Nexperia
$1.4512 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 25 V 1 100 A 1.85 mΩ 677 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 815 A SWITCHING SILICON R-PSSO-G4 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SOIC ROHS COMPLIANT, PLASTIC, LFPAK-4 4 SOT1023 not_compliant EAR99 Nexperia
PSMN1R2-30YLC
NXP Semiconductors
Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 100 A 1.65 mΩ HIGH RELIABILITY, ULTRA-LOW RESISTANCE 209 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.237 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 Not Qualified 1 NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE NXP SEMICONDUCTORS PLASTIC, POWER-SO8, LFPAK-4 235 unknown EAR99 NXP
PSMN1R2-30YLD
Nexperia
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 30 V 1 100 A 1.6 mΩ HIGH RELIABILITY 961 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.181 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 IEC-60134 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SOP-8, 4 PIN not_compliant EAR99 Nexperia 2017-02-17
PSMN1R2-25YLC
Nexperia
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 25 V 1 100 A 1.7 mΩ HIGH RELIABILITY, ULTRA-LOW RESISTANCE 178 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.133 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SO8, LFPAK-4 not_compliant EAR99 Nexperia 2017-02-01
PSMN1R2-25YLD
Nexperia
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 25 V 1 230 A 1.69 mΩ HIGH RELIABILITY 1293 mJ 292 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 172 W 1.163 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 IEC-60134 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NEXPERIA SMALL OUTLINE, R-PSSO-G4 not_compliant EAR99 Nexperia 2017-02-27
PSMN1R2-25YLC
NXP Semiconductors
Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 25 V 1 100 A 1.7 mΩ HIGH RELIABILITY, ULTRA-LOW RESISTANCE 178 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.133 kA SWITCHING SILICON MO-235 R-PSSO-G4 e3 Not Qualified 1 NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE NXP SEMICONDUCTORS PLASTIC, POWER-SO8, LFPAK-4 235 unknown EAR99