Parametric results for: PSMN038 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

45.1 mJ 3

14 hits Apply

DRAIN 3

14 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 10

14 hits Apply

DS Breakdown Voltage-Min (1)

100 V 10

14 hits Apply

Drain Current-Max (ID) (2)

6.3 A 9 30 A 4

Min (A) - Max (A)

14 hits Apply

Drain-source On Resistance-Max (2)

37.5 mΩ 3 38 mΩ 7

Min (Ω) - Max (Ω)

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

14 hits Apply

MO-235 3 MS-012AA 7

14 hits Apply

R-PDSO-G8 7 R-PSSO-G4 3

14 hits Apply

e3 3 e4 6

14 hits Apply

Manufacturer (3)

Nexperia 6 NXP Semiconductors 7 Philips Semiconductors 1

14 hits Apply

1 3 2 6

14 hits Apply

Number of Elements (1)

1 13

14 hits Apply

Number of Terminals (2)

4 3 8 7

14 hits Apply

ENHANCEMENT MODE 13

14 hits Apply

150.0 °C 5 175.0 °C 1

Min (°C) - Max (°C)

14 hits Apply

PLASTIC/EPOXY 10

14 hits Apply

RECTANGULAR 10

14 hits Apply

SMALL OUTLINE 10

14 hits Apply

Active 3 Obsolete 2 Transferred 9

14 hits Apply

No 1 Yes 1

14 hits Apply

260 8 NOT SPECIFIED 2

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

14 hits Apply

3.5 W 5 94.9 W 1

Min (W) - Max (W)

14 hits Apply

Surface Mount (1)

YES 13

14 hits Apply