Parametric results for: PJQ4848P_R2_00001 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA LOW RESISTANCE 1

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DRAIN 1

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Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

40 V 1

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Drain Current-Max (ID) (1)

9 A 1

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Drain-source On Resistance-Max (1)

15 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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S-PDSO-F6 1

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Manufacturer (1)

PanJit Semiconductor 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

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SQUARE 1

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SMALL OUTLINE 1

1 hit Apply

Not Recommended 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

1 hit Apply