Parametric results for: PHM2 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

170.0 mJ 2 250.0 mJ 2

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (2)

100 V 2 150 V 2

Min (V) - Max (V)

6 hits Apply

Drain Current-Max (ID) (3)

22.2 A 3 30.7 A 2 31.7 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

30 mΩ 2 55 mΩ 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-N8 4

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

NXP Semiconductors 4 Philips Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

8 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

62.5 W 2 69.4 W 2

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply