Parametric results for: PHB80N06LT under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, FAST SWITCHING 1

6 hits Apply

200.0 mJ 4

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

55 V 4

6 hits Apply

Drain Current-Max (ID) (1)

75 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

14 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

330 pF 3

6 hits Apply

R-PSSO-G2 4

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

NXP Semiconductors 4 Philips Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 6

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

178 W 3

6 hits Apply

178 W 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply