Parametric results for: PHB4N40E under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1

3 hits Apply

190.0 mJ 1 195.0 mJ 1

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

400 V 2

3 hits Apply

Drain Current-Max (ID) (1)

4.4 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

1.8 Ω 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSSO-G2 2

3 hits Apply

e0 1

3 hits Apply

Manufacturer (2)

NXP Semiconductors 2 Philips Semiconductors 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

83 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply