Parametric results for: PDTA123EM under Small Signal Bipolar Transistors
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PDTA123EM
Philips Semiconductors
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Check for Price | No | Transferred | 100 mA | PNP | YES | 1 | 30 | 250 mW | SILICON | e0 | Tin/Lead (Sn/Pb) | PHILIPS SEMICONDUCTORS | , | unknown | EAR99 | ||||||||||||||||||||||||||
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PDTA123EMB,315
NXP Semiconductors
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Check for Price | Yes | Transferred | PNP | YES | 1 | 30 | 250 mW | SILICON | e3 | 1 | 260 | 30 | TIN | NXP SEMICONDUCTORS | compliant | EAR99 | DFN | 3 | SOT883B | ||||||||||||||||||||||
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PDTA123EM
Nexperia
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Check for Price | Yes | Active | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | BUILT-IN BIAS RESISTOR RATIO IS 1 | SWITCHING | SILICON | R-PBCC-N3 | e3 | AEC-Q101 | 1 | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | NEXPERIA | CHIP CARRIER, R-PBCC-N3 | compliant | EAR99 | 1999-05-21 | Nexperia | |||||||||
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PDTA123EM
NXP Semiconductors
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Check for Price | Yes | Transferred | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | BUILT-IN BIAS RESISTOR RATIO IS 1 | 250 mW | SWITCHING | SILICON | R-PBCC-N3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | Tin (Sn) | NO LEAD | BOTTOM | NXP SEMICONDUCTORS | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN | compliant | EAR99 | SC-101 | 3 | |||||||
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PDTA123EMB,315
Nexperia
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Check for Price | Yes | Active | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | 180 MHz | BUILT IN BIAS RESISTANCE RATIO IS 1 | SWITCHING | SILICON | R-PBCC-N3 | e3 | AEC-Q101; IEC-60134 | 1 | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | NEXPERIA | DFN1006B-3, 3 PIN | compliant | EAR99 | DFN | 3 | SOT883B | Nexperia | ||||||
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PDTA123EMB
Nexperia
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Check for Price | Yes | Active | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | 180 MHz | BUILT IN BIAS RESISTANCE RATIO IS 1 | SWITCHING | SILICON | R-PBCC-N3 | e3 | AEC-Q101; IEC-60134 | 1 | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | NEXPERIA | CHIP CARRIER, R-PBCC-N3 | compliant | EAR99 | 2017-02-01 | |||||||||
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PDTA123EM,315
Nexperia
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Check for Price | Yes | Active | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | BUILT-IN BIAS RESISTOR RATIO IS 1 | SWITCHING | SILICON | R-PBCC-N3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | NEXPERIA | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN | compliant | EAR99 | DFN | 3 | SOT883 | Nexperia | |||||
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PDTA123EMB
NXP Semiconductors
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Check for Price | Yes | Transferred | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | 180 MHz | BUILT IN BIAS RESISTANCE RATIO IS 1 | SWITCHING | SILICON | R-PBCC-N3 | e3 | AEC-Q101; IEC-60134 | 1 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | NXP SEMICONDUCTORS | 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PIN | unknown | EAR99 | ||||||||||||
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PDTA123EM,315
NXP Semiconductors
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Check for Price | Yes | Transferred | 50 V | 100 mA | PNP | YES | SINGLE WITH BUILT-IN RESISTOR | 3 | 1 | 30 | BUILT-IN BIAS RESISTOR RATIO IS 1 | SWITCHING | SILICON | R-PBCC-N3 | e3 | Not Qualified | 1 | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | TIN | NO LEAD | BOTTOM | NXP SEMICONDUCTORS | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN | unknown | EAR99 | DFN | 3 | SOT883 |