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P4C164-12DMBLF
Pyramid Semiconductor Corporation
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Check for Price | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 12 ns | STANDARD SRAM | LG-MAX | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 25 mA | 4.5 V | 180 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | 125 °C | -55 °C | NOT SPECIFIED | MIL-STD-883 Class B | NOT SPECIFIED | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 37.719 mm | 7.62 mm | PYRAMID SEMICONDUCTOR CORP | DIP | DIP, DIP28,.3 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | ||||
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P4C164-12DM
Pyramid Semiconductor Corporation
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Check for Price | No | No | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 12 ns | STANDARD SRAM | LG-MAX | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 25 mA | 4.5 V | 180 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 37.719 mm | 7.62 mm | PYRAMID SEMICONDUCTOR CORP | DIP | DIP, DIP28,.3 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||
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P4C164-12DMB
Pyramid Semiconductor Corporation
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Check for Price | No | No | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 12 ns | STANDARD SRAM | LG-MAX | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 25 mA | 4.5 V | 180 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 37.719 mm | 7.62 mm | PYRAMID SEMICONDUCTOR CORP | DIP | DIP, DIP28,.3 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | ||||
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P4C164-12DMLF
Pyramid Semiconductor Corporation
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Check for Price | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 12 ns | STANDARD SRAM | LG-MAX | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 180 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 37.719 mm | 7.62 mm | PYRAMID SEMICONDUCTOR CORP | DIP | DIP, | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 |