Parametric results for: OM360NK under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 9

9 hits Apply

1000.0 mJ 9

9 hits Apply

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

400 V 9

9 hits Apply

Drain Current-Max (ID) (1)

24 A 9

9 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-3 9

9 hits Apply

O-MBFM-P2 9

9 hits Apply

e0 7

9 hits Apply

Manufacturer (3)

Infineon Technologies AG 3 International Rectifier 3 Omnirel Corp 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

2 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 5

9 hits Apply

METAL 9

9 hits Apply

ROUND 9

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Active 3 Transferred 6

9 hits Apply

No 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

200 W 3

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply