Findchips: Parametric Search Results for NX5307EH


Select Parts		Part Number

		NX5307EH-A Renesas Electronics Corporation
		NX5307EH-A NEC Electronics Group
		NX5307EH-A NEC Compound Semiconductor Devices Ltd
		NX5307EH NEC Compound Semiconductor Devices Ltd
		NX5307EH NEC Electronics Group
		NX5307EH Renesas Electronics Corporation
		NX5307EH NEC Electronics America Inc
		NX5307EH-AZ Renesas Electronics Corporation

			Most Relevant					Technical											Compliance	Operating Conditions		Physical			Dimensions		Other
Composite Price	Rohs Code	Part Life Cycle Code	Operating Wavelength-Nom	Operating Wavelength-Min	Operating Wavelength-Max	Data Rate	Supply Voltage-Nom	Fiber Optic Device Type	Additional Feature	Communication Standard	Fall Time-Max	Number of Channels	Rise Time	Spectral Width	Supply Current	Supply Voltage-Max	Threshold Current-Min	Transmission Type	JESD-609 Code	Operating Temperature-Min	Operating Temperature-Max	Mounting Feature	Surface Mount	Terminal Finish	Body Height	Body Length or Diameter	Ihs Manufacturer	Reach Compliance Code	Package Description	Forward Current-Max	Forward Voltage-Max	Optoelectronic Device Type	Peak Wavelength	Response Time-Max	Semiconductor Material	Spectral Bandwidth

Check for Price

Yes

Obsolete

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Bismuth (Sn/Bi)

5.07 mm

4.2 mm

RENESAS ELECTRONICS CORP

unknown

Check for Price

Yes

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Bismuth (Sn/Bi)

5.07 mm

4.2 mm

NEC ELECTRONICS CORP

compliant

Check for Price

Yes

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

5.07 mm

4.2 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

CAN PACKAGE-4

Check for Price

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

ITU-T, SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

4.2 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

Check for Price

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

ITU-T, SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

4.2 mm

NEC ELECTRONICS CORP

compliant

Check for Price

Obsolete

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

ITU-T, SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

4.2 mm

RENESAS ELECTRONICS CORP

unknown

Check for Price

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

OTHER VALUE FOR THRESHOLD CURRENT: 10MA

SDH, STM-16

150 ps

1 nm

1.5 V

25 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

5.6 mm

NEC ELECTRONICS AMERICA INC

compliant

Check for Price

Yes

Obsolete

-40 °C

85 °C

THROUGH HOLE MOUNT

RENESAS ELECTRONICS CORP

compliant

150 mA

1.5 V

LASER DIODE

1.31 µm

200 ps

InGaAsP

2.5 m

Compare

NX5307EH-A

Renesas Electronics Corporation

Check for Price

Yes

Obsolete

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Bismuth (Sn/Bi)

5.07 mm

4.2 mm

RENESAS ELECTRONICS CORP

unknown

NX5307EH-A

NEC Electronics Group

Check for Price

Yes

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Bismuth (Sn/Bi)

5.07 mm

4.2 mm

NEC ELECTRONICS CORP

compliant

NX5307EH-A

NEC Compound Semiconductor Devices Ltd

Check for Price

Yes

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

5.07 mm

4.2 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

CAN PACKAGE-4

NX5307EH

NEC Compound Semiconductor Devices Ltd

Check for Price

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

ITU-T, SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

4.2 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

NX5307EH

NEC Electronics Group

Check for Price

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

ITU-T, SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

4.2 mm

NEC ELECTRONICS CORP

compliant

NX5307EH

Renesas Electronics Corporation

Check for Price

Obsolete

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

ITU-T, SDH, STM-16

150 ps

1 nm

600 µA

1.5 V

10 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

4.2 mm

RENESAS ELECTRONICS CORP

unknown

NX5307EH

NEC Electronics America Inc

Check for Price

Transferred

1.31 µm

1.266 µm

1.36 µm

2.5 Gbps

1.1 V

LASER DIODE EMITTER

OTHER VALUE FOR THRESHOLD CURRENT: 10MA

SDH, STM-16

150 ps

1 nm

1.5 V

25 mA

DIGITAL

-40 °C

85 °C

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

5.07 mm

5.6 mm

NEC ELECTRONICS AMERICA INC

compliant

NX5307EH-AZ

Renesas Electronics Corporation

Check for Price

Yes

Obsolete

-40 °C

85 °C

THROUGH HOLE MOUNT

RENESAS ELECTRONICS CORP

compliant

150 mA

1.5 V

LASER DIODE

1.31 µm

200 ps

InGaAsP

2.5 m

Parametric results for: NX5307EH under Fiber Optic Emitters