Parametric results for: NX1029X under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

5 hits Apply

Drain Current-Max (ID) (1)

330 mA 4

5 hits Apply

Drain-source On Resistance-Max (1)

1.6 Ω 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

4 pF 3

5 hits Apply

R-PDSO-F6 3

5 hits Apply

e3 4

5 hits Apply

Manufacturer (2)

Nexperia 3 NXP Semiconductors 2

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

2 3

5 hits Apply

Number of Terminals (1)

6 3

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 4

5 hits Apply

-55.0 °C 3

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Active 3 Transferred 2

5 hits Apply

260 3 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 4

5 hits Apply

500 mW 3 1.09 W 1

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply