Parametric results for: NV25010DWHFT3G under EEPROMs

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

10 MHz 1

1 hit Apply

200 1

1 hit Apply

300000.0 Write/Erase Cycles 1

1 hit Apply

R-PDSO-G8 1

1 hit Apply

e4 1

1 hit Apply

4.9 mm 1

1 hit Apply

Manufacturer (1)

onsemi 1

1 hit Apply

Memory Density (1)

1.024 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1 1

1 hit Apply

1.0 1

1 hit Apply

8 1

1 hit Apply

128 words 1

1 hit Apply

128.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

150.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

128X8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOP 1

1 hit Apply

SOP8,.25 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply