Parametric results for: NTH4L080N120SC1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 1

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171.0 mJ 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

1.2 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

29 A 1

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Drain-source On Resistance-Max (1)

110 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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10 pF 1

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TO-247 1

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R-PSFM-T4 1

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e3 1

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Manufacturer (1)

onsemi 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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ENHANCEMENT MODE 1

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175.0 °C 1

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-55.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Active 1

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Yes 1

1 hit Apply

NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

170 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply