Parametric results for: NTD36 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

40.0 mJ 1 75.0 mJ 1

Min (mJ) - Max (mJ)

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (2)

650 V 1 800 V 1

Min (V) - Max (V)

2 hits Apply

Drain Current-Max (ID) (2)

10 A 1 13 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (1)

360 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-252AA 2

2 hits Apply

R-PSSO-G2 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (1)

onsemi 2

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 2

2 hits Apply

Yes 2

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

83 W 1 96 W 1

Min (W) - Max (W)

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply