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NT5TU64M8EE-3CI
Nanya Technology Corporation
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Check for Price | Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 450 ps | 333 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 95 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | VFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 10 mm | 8 mm | NANYA TECHNOLOGY CORP | VFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.28 | ||
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NT5TU64M8EE-3C
Nanya Technology Corporation
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Check for Price | Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 450 ps | 333 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | VFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 10 mm | 8 mm | NANYA TECHNOLOGY CORP | VFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.28 | |||
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NT5TU64M8EE-AC
Nanya Technology Corporation
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B60 | Not Qualified | 95 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | VFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 10 mm | 8 mm | NANYA TECHNOLOGY CORP | VFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.28 | |||
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NT5TU64M8EE-ACI
Nanya Technology Corporation
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Check for Price | Yes | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | 400 MHz | 8192 | FOUR BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 95 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | VFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 10 mm | 8 mm | NANYA TECHNOLOGY CORP | VFBGA, BGA60,9X11,32 | compliant | EAR99 | 8542.32.00.28 | ||
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NT5TU64M8EE-ACT
Nanya Technology Corporation
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Check for Price | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 400 ps | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | R-PBGA-B60 | 60 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 10 mm | 8 mm | NANYA TECHNOLOGY CORP | VFBGA, | compliant | EAR99 | 8542.32.00.28 |